Quantum ballistic transport in the junctionless nanowire pinch-off field effect transistor |
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Authors: | Dries Sels Bart Sorée Guido Groeseneken |
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Affiliation: | 1. Interuniversitary Micro-Electronics Center (IMEC), Kapeldreef 75, 3001, Leuven, Belgium
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Abstract: | In this work we investigate quantum ballistic transport in ultrasmall junctionless and inversion mode semiconducting nanowire transistors within the framework of the self-consistent Schrödinger-Poisson problem. The quantum transmitting boundary method is used to generate open boundary conditions between the active region and the electron reservoirs. We adopt a subband decomposition approach to make the problem numerically tractable and make a comparison of four different numerical approaches to solve the self-consistent Schrödinger-Poisson problem. Finally we discuss the IV-characteristics for small (r≤5 nm) GaAs nanowire transistors. The novel junctionless pinch-off FET or junctionless nanowire transistor is extensively compared with the gate-all-around (GAA) nanowire MOSFET. |
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