| 扩散硅压敏元件零点温漂的补偿 |
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| 引用本文： | 毛崑,李广才,杨文国.扩散硅压敏元件零点温漂的补偿[J].哈尔滨工业大学学报,1987(4). |
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| 作者姓名： | 毛崑 李广才 杨文国 |
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| 作者单位： | 哈尔滨工业大学精密仪器专业
(毛崑，李广才)，哈尔滨工业大学精密仪器专业(杨文国) |
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| 摘 要： | 由于扩散硅压敏元件受温漂影响较大,如不经补偿就会失掉其体积小,可靠性高和灵敏度高等优点。针对这个同题,本文提出了一种新的补偿理论:即在温度变化时,不仅考虑一次温度系数而且考虑二次温度系数对阻值的影响。并通过实验验证了该理论。本文还提出了一种利用微机的快速测试方法,并根据这种方法设计了测试装置。
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| 关 键 词： | 零点漂移 扩散硅 力敏元件 温度系数 |
Compensation for Dispersed Silicon Pressure-Sensitive Element Zero Wander by Temperature Changing |
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| Mao Kun Li Guangcai Yang Wenguo.Compensation for Dispersed Silicon Pressure-Sensitive Element Zero Wander by Temperature Changing[J].Journal of Harbin Institute of Technology,1987(4). |
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| Authors: | Mao Kun Li Guangcai Yang Wenguo |
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| Affiliation: | Mao Kun Li Guangcai Yang Wenguo |
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| Abstract: | Because the dispersed silicon pressure-sensitive element is deeply effected by zero Wander, its advantages such as small volume, high reliabilty, high sensitivity, etc. will disappear if there is no compensation of zero wander for the element during temperature changing. Therefore, this paper presents a new compensation theory, that is, not only the effects of the first but also the second temperature coefficient on the value of electric resistance should be taken into consideration during temperature changing, which has been verified by experioents. This paper also proposes a rapid measuring method by a computer and a testing device especially for the proposed method. |
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| Keywords: | Zero wander dispersed silicon pressure-sensitive element tenperature coefficient |
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