衬底掺杂浓度对深亚微米槽栅PMOSFET特性影响

基于流体动力学能量输运模型，利用二维器件仿真软件MEDICI，对衬底掺杂浓度不同的深亚微米槽栅PMOSFET特性进行了研究，并与相应平面器件的特性进行了对比。研究发现，随着衬底掺杂浓度的提高， 与平面器件相同，槽栅器件的阈值电压提高，漏极驱动能力降低，抗热载流子能力急剧退化；但与平面器件相比，槽栅器件的阈值电压受衬底杂质浓度影响较小；漏极驱动能力及抗热载流子性能随衬底杂质浓度提高的退化则较平面器件小得多。

Study on the influence of substrate doping desity on the characteristics for deep-sub-micron grooved-gate PMOSFET

Based on the hydrodynamic energy transport model, the influence of substrate doping density on performance for deep sub micron grooved gate PMOSFET is studied using two dimensional device simulator MEDICI and is compared to that of the counterpart conventional planar device. For both structure PMOSFETs, the study results prove that, with the increase of substrate doping density, the threshold voltage increase, the drain current driving ability decrease, and the hot carrier effect is enhanced, but the rate of threshold voltage increases, the factors of drain current driving capability degradation and hot carrier effect enhancement are much larger in plannar PMOSFET than in grooved gate PMOSFET.