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高压下BeP2 晶体结构与物性的理论研究
引用本文:高文泉,李鑫,马雪姣,刘艳辉.高压下BeP2 晶体结构与物性的理论研究[J].延边大学理工学报,2019,0(1):31-35.
作者姓名:高文泉  李鑫  马雪姣  刘艳辉
作者单位:( 延边大学 理学院, 吉林 延吉 133002 )
摘    要:将密度泛函理论第一性原理的计算方法与晶体结构预测CALYPSO软件相结合,在0~100 GPa下对BeP2的结构进行预测,研究了其在高压下的结构与物性.预测结果表明:在常压下, α -BeP2相为立方结构,其空间群为I41/amd, 该结果与实验所得结构一致.当压强为30.1 GPa时, α -BeP2相发生结构相变,由α -BeP2相转变为β -BeP2相,其结构转变为四方结构,空间群为P43212.当压强为35.4 GPa时, β -BeP2相发生结构相变,由β -BeP2相转变为γ -BeP2相,其结构转变为正交结构,空间群为Imma.在相变过程中,晶体结构体积发生坍塌,坍塌率分别为7.1%和10.9%, 属于一级相变.电子性质计算表明:在0 GPa下, α -BeP2结构的带隙为0.457 eV; 在30.1 GPa下, β -BeP2结构的带隙为0.957 eV, 为窄带隙半导体; 在35.4 GPa下, γ -BeP2结构在费米面处其导带与价带发生交叠,具有金属性.

关 键 词:高压  第一性原理  2  BeP2  半导体

Structure and propertieso of BeP_2 under high pressure
GAO Wenquan,LI Xin,MA Xuejiao,LIU Yanhui.Structure and propertieso of BeP_2 under high pressure[J].Journal of Yanbian University (Natural Science),2019,0(1):31-35.
Authors:GAO Wenquan  LI Xin  MA Xuejiao  LIU Yanhui
Affiliation:( College of Science, Yanbian University, Yanji 133002, China )
Abstract:At the pressure range from 0-100 GPa, the crystals of BeP2 are predicted by using the CALYPSO structure exploration techniue combined with based on the first-principles of density functional theory and the structure and physical properties under high pressure are systematically studied. The prediction results show that the calculated results are all in good agreement with experimental in the literature, which indicated that the predicted α -BeP2 phase has a tetragonal structure with I41/amd with space group at ambient pressure. When the pressure is 30.1 GPa, structural transformations are unraveled from α -BeP2 phase to β -BeP2 phase, the structure changes to tetragonal structure, and the space group is P43212. When the pressure is 35.4 GPa, structural transformations are unraveled from β -BeP2 phase to γ -BeP2 phase, the structure changes to orthogonal structure, and its space group is Imma. Due to the structure transition, the volume of the crystal structure collapsed and the collapse rates were 7.1% and 10.9%, respectively. So that the phase transition belonged to the first-order phase transition. The calculation of electronic properties shows that the band gap of α -BeP2 structure is 0.457 eV at 0 GPa, and the band gap of β -BeP2 phase band struture is 0.957 eV at 30.1 GPa which are all narrow band gap semiconductors. At 35.4 GPa, the γ -BeP2 structure overlaps the valence band at the Fermi surface and is metallic.
Keywords:high pressure  first-principles  2 BeP2  semiconductors
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