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Temperature and frequency dependence of dielectric loss of Ba(Mg1/3Ta2/3)O3 microwave ceramics |
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| Authors: | T Shimada K Ichikawa T Minemura T Kolodiazhnyi Jonathan Breeze Neil McN Alford Giuseppe Annino |
| Affiliation: | 1. Advanced Electronics Research Laboratory, Hitachi Metals Ltd., 5200 Mikajiri, Kumagaya, Saitama 618-0013, Japan;2. National Institute for Material Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan;3. Department of Materials, Imperial College London, UK;4. Institute for Chemical and Physical Processes, CNR, Pisa 56124, Italy;1. National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan;2. School of Physics, Institute of Science and NANOTEC-SUT COE on Advanced Functional Nanomaterials, Suranaree University of Technology, Nakhon Ratchasima 30000, Thailand;1. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, PR China;2. Key Lab of Functional Materials for Electronic Information (B), Ministry of Education, Wuhan 430074, PR China;3. State Key Laboratory of Advanced Materials and Electronic Components, Guangdong Fenghua Advanced Technology Holding Co., Ltd., Zhaoqing 526020, PR China;1. Department of Materials Science and Engineering, Tarbiat Modares University, Tehran, PO Box 14115-143, Iran;2. Materials Program, Arizona State University, Tempe, Arizona 85287-6106, USA;3. National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan |
| Abstract: | Ba(Mg1/3Ta2/3)O3 ceramic possessing extremely high Q × f value of more than 300 THz at microwave frequency was developed in our previous study. It is of great interest to understand the mechanism of microwave absorption in such a practical material. In the present study we report on the temperature dependence of the dielectric loss in the Ba(Mg1/3Ta2/3)O3. The mechanism of the microwave absorption is discussed using two phonons difference process. The samples were prepared by conventional solid state reaction and sintered at 1893 K in oxygen atmosphere. Dielectric properties in the microwave range were measured by Hakki & Colemann and resonant cavity methods in the temperature range of 20–300 K. Whispering gallery mode technique was used for the measurement of the dielectric properties at the millimeter wave frequency. Dielectric loss of the Ba(Mg1/3Ta2/3)O3 at the microwave frequency increases with temperature between 200 and 300 K in general agreement with the theory of intrinsic dielectric loss derived from the two phonon difference process. However below 200 K, the dielectric loss has shown a distinctive behavior with a loss peak at 40 K. It was inferred that the loss peak of the Ba(Mg1/3Ta2/3)O3 was caused by the local orientation polarization having dispersion at the microwave frequency. |
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