不同烧结气氛下制备的AlN陶瓷结构和电性能的差异

以AlN粉末为原料、Y2O3粉末为烧结助剂，分别在氮气气氛下和真空气氛下，采用放电等离子烧结方法在1700℃、25MPa条件下保温10min制备AIN陶瓷。X-射线衍射、扫描电镜和X-射线光电子能谱分析表明：不同烧结气氛下制备的AlN陶瓷的结构和体积电阻率各有不同。真空气氛AlN陶瓷与氮气气氛AlN陶瓷相比较，除舍有主晶相AlN和第二相Y3Al5O12外，还含有微量Al2Y相。正是由于微量Al2Y相的存在，使得真空气氛下得到的AlN陶瓷比氮气气氛下得到的A1N陶瓷的体积电阻率低约2个数量级。

Structure and Electrical Properties of AlN Ceramics Prepared in Different Sintering Atmospheres

AlN Powders doped with 2% Y2O3 are respectively sintered in nitrogen and vacuum atmospheres at 1700 ℃ for 10 min under 25 MPa using a spark plasma sintering process. In terms of structure and bulk elec-trical resistivity,there are differences between AlN ceramics prepared in different sintering atmospheres. The XRD,SEM and XPS testings show that,there is a very small amount of Al2Y in AlN ceramic sintered in vacu-um atmosphere, except that there is Y3 Al5 O12 as a secondary phase in AlN ceramics sintered in the different at-mospheres. The Al2 Y-phase explains the difference of bulk electrical resistivity in these two kinds of AlN ce-ramics.