Analysis of Temperature Effect in Quadruple Gate Nano-scale FinFET |
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| Authors: | Toan Ho Le Minh Singh Sruti Suvadarsini Maity Subir Kumar |
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| Affiliation: | 1.School of Electronics Engineering, Kalinga Institute of Industrial Technology (KIIT), Bhubaneswar, Odisha, Pin-751024, India
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| Abstract: | Silicon - Quadruple gate FinFET is a promising candidate among other multi-gate MOS devices due to it’s better scalability and higher short channel effect suppression capability in advanced... |
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