An Analytical Model Including Interface Traps and Temperature Effects in Negative Capacitance Double Gate Field Effect Transistor |
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| Authors: | Dong Yibiao Han Ru Wang Danghui Wang Ruofei Guo Chenmeng |
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| Affiliation: | 1.School of Computer Science and Engineering, Northwestern Polytechnical University, Xi’an, 710129, China
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| Abstract: | Silicon - In this paper, an analytical model for negative capacitance double gate field effect transistor (NC-DG-FET) is proposed. This model includes interface traps and temperature effects, which... |
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