Influence of the target power on the microstructure and electrical properties of Al-doped ZnO thin films deposited at room temperature

The columnar structure and its formation process have a significant effect on the electrical properties of Al-doped ZnO (AZO) thin film in-situ deposited at room temperature by magnetron sputtering method. The influences of RF power on the formation of the columnar structure and its regular pattern were systematically investigated. The RF power varied from 120 W to 240 W. The best quality AZO sample with the sheet resistance of 6.07 Ω/sq and average transmittance of 83.2% was obtained at 210 W (for 30 min). The analysis of crosses section images indicated that the columnar structure appeared earlier at higher RF power. The thickness at which the columnar structure began to appear didn't fluctuate at a fixed value. Furthermore, high RF power relatively contributed to reduce the thickness. The Drude's model was used for examining the correlation between optical and electrical behaviors, and the theoretical results of electrical properties were well matched with the experimental data. According to the XRD results and XPS analysis, the appearance of Al₂O₃ may exert a significant influence on the deterioration in electrical properties of the sample deposited at 240 W.