Preparation and microwave dielectric properties of Ca0.6La0.8/3(SnxTi1−x)O3 ceramics |
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| Affiliation: | 1. School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China;2. School of Electrical Engineering and Automation, Henan Polytechnic University, Jiaozuo 454003, China;1. Department of Information Engineering, Guilin University of Aerospace Technology, Guilin 541004, PR China;2. College of Material Science and Engineering, Central South University, Changsha 410083, PR China;3. College of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, PR China;1. Ministry of Education Key Laboratory for the Green Preparation and Application of Functional Materials, Faculty of Materials Science & Engineering, Hubei University, Wuhan 430062, People’s Republic of China;2. Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei University, Wuhan 430062, People’s Republic of China;1. College of Material Science and Engineering, Central South University, Changsha 410083, People''s Republic of China;2. College of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, PR China;1. College of Material Science and Engineering, Central South University, Changsha 410083, PR China;2. College of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, PR China;3. Department of Information Engineering, Guilin University of Aerospace Technology, Guilin 541004, PR China |
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| Abstract: | Ca0.6La0.8/3(SnxTi1−x)O3 ceramics were prepared via a conventional solid state reaction method, and the effect of Sn doping on their crystal phase structure and microwave dielectric properties was investigated. Results showed that Sn doping could hinder the formation of the rutile TiO2 detrimental phase of Ca0.6La0.8/3TiO3 ceramic. Also, the Q×f0 value was enhanced and the τf value was lowered by Sn doping. The best microwave dielectric properties, i. e. εr=113 and Q×f0=8487 GHz were obtained for a Sn doping content of 0.02. The mechanism of the improved properties deriving by Sn doping is discussed. |
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| Keywords: | Sn doping Microwave dielectric property |
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