Ruthenium electrodeposition on silicon from a room-temperature ionic liquid |
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Authors: | Ofer Raz Werner Freyland Yair Ein-Eli |
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Affiliation: | a Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000, Israel b Institute of Physical Chemistry, Karlsruhe Institute of Technology (KIT), Kaiserstrasse 12, 76128 Karlsruhe, Germany |
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Abstract: | Electrochemical deposition of ruthenium on n-type silicon from an ionic liquid is reported for the first time. The study was performed by dissolving ruthenium(III) chloride in a 1-butyl-3-methyl imidazolium hexafluorophosphate (BMIPF6) room-temperature ionic liquid (RTIL). Cyclic voltammetry (CV) studies demonstrate reduction and stripping peaks at −2.1 and 0.2 V vs. Pt quasi-reference, corresponding to the deposition and dissolution of ruthenium, respectively. Metallic Ru films of ∼100 nm thickness have been deposited and were analyzed using scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). |
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Keywords: | Ionic liquids Electrodeposition Ruthenium |
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