Domain Wall Motion Across Various Grain Boundaries in Ferroelectric Thin Films |
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| Authors: | Daniel M Marincel Huairuo Zhang Stephen Jesse Alex Belianinov Mahmut B Okatan Sergei V Kalinin W Mark Rainforth Ian M Reaney Clive A Randall Susan Trolier‐McKinstry |
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| Affiliation: | 1. Department of Materials Science and Engineering and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania;2. Department of Materials Science and Engineering, The University of Sheffield, Sheffield;3. The Center for Nanophase Materials Science, Oak Ridge National Laboratory, Oak Ridge, Tennessee |
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| Abstract: | Domain wall movement at and near engineered 10°, 15°, and 24° tilt and 10° and 30° twist grain boundaries was measured by band excitation piezoresponse force microscopy for Pb(Zr,Ti)O3 films with Zr/Ti ratio of 45/55 and 52/48. A minimum in nonlinear response was observed at the grain boundary for the highest angle twist and tilt grain boundaries, while a maximum in nonlinear response was observed at the 10° tilt grain boundaries. The observed nonlinear response was correlated with the domain configurations imaged in cross section by transmission electron microscopy. |
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