| 栅隧穿电流分量研究 |
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| 引用本文： | 赖忠有.栅隧穿电流分量研究[J].电子质量,2011(12):5-6,10. |
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| 作者姓名： | 赖忠有 |
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| 作者单位： | 中国空空导弹研究院元器件检测中心,河南洛阳,471009 |
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| 摘 要： | MOS器件尺寸缩减,导致栅氧化层厚度急剧减小,引起栅隧穿电流的迅速增大,对MOS器件特性产生了很大影响。该文基于此,重点分析和研究了栅隧穿电流分量及其特性,并针对四端MOS器件给出了相应的栅隧穿电流分量测试原理及构思。
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| 关 键 词： | MOS器件 栅氧化层 隧穿 |
Research on Gate Tunneling Current Components |
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| Lai Zhong-you.Research on Gate Tunneling Current Components[J].Electronics Quality,2011(12):5-6,10. |
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| Authors: | Lai Zhong-you |
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| Affiliation: | Lai Zhong-you(China Airborne Missile Academy,Henan Luoyang 471009) |
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| Abstract: | The scaled-down trend of MOS devices has led to a dramatically reduce of equivalent gate oxide thickness,then gate tunneling current increases rapidly,and the characteristic of MOS devices is influenced much.Based on this,the components and characteristic of gate tunneling current are mainly analyzed in this paper,finally the measure principle and method of gate tunneling current components are also presented for four-pins MOS devices. |
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| Keywords: | MOS devices gate oxide tunneling |
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