化合物半导体光电化学新进展

半导体光电化学已广泛用于化合物半导体的材料测试和器件工艺。本文总结了光电化学这一研究技术的最新进展;叙述了利用液结肖特基势垒的许多测定化合物半导体体内和表面特性的方法,列举了用这些方法测得的平带电势、禁带宽度、少子扩散长度、载流子浓度、多元化合物组分分布、晶体完整性、深能极、表面态、能带结构和复合特性等;也介绍了半导体光电化学的一些新兴领域,如辐射电化学、照相电化学和激光电化学等,强调了它们在新型器件工艺中的应用。

New Progress in Photoelectrochemistry of Compound Semiconductors

The photoelectrochemistry of semiconductors has been widely used for the investigation of compound semiconductor materials and for the improvement of device technologies. In this paper, the latest progress of photoelectrochemistry as a technique is reviewed. And also discussed are many photoelectrochemical measurements using liquid Schottky barriers on characterization of the bulk and surface properties of compound semiconductors,including flat band potentials, minority carrier diffusion length, carrier concentration and composition profiles,crystalline perfection,deep levels,surface states, energy band structure recombination properties, etc. In addition, several newly developed fields in the photoelectrochemistry of semiconductors, such as radiative electrochemistry, electrochemical photography and laser electrochemistry are briefly introduced, and finally their applications in new device technologies are especially emphasized.