| 低温硅双极晶体管基区优化设计 |
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| 引用本文： | 黄流兴,魏同立.低温硅双极晶体管基区优化设计[J].固体电子学研究与进展,1994,14(3):260-266. |
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| 作者姓名： | 黄流兴 魏同立 |
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| 作者单位： | 东南大学微电子中心 |
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| 摘 要： | 常规双极晶体管在７７Ｋ下电流增益和频率性能都严重退化。本文首先分析了低温双极晶体管基区Ｇｕｍｍｅｌ数，基区方块电阻，渡越时间和穿通电压等参数与温度及基区掺杂的关系，然后讨论了低温双极器件基区的优化设计问题。
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| 关 键 词： | 双极晶体管，基区，低温，渡越时间，掺杂分布 |
The Optimized Base Design Consideration of Silicon Bipolar Transistors for Low Temperature Operation |
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| Huang Liuxing,Wei Tougli.The Optimized Base Design Consideration of Silicon Bipolar Transistors for Low Temperature Operation[J].Research & Progress of Solid State Electronics,1994,14(3):260-266. |
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| Authors: | Huang Liuxing Wei Tougli |
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| Abstract: | The conventional silicon bipolar transistors designed for room temperature operation suffer serious degradation in current gain and frequency performance at 77 K. In this paper,the temperature dependence and variation of parameters,including the base Gummel number,the base sheet resistance,the base transit time and the pushthrough voltage,versus temperature and the base doping profile are analyzed. Then the optimization of base design of silicon bipolar transistors for low temperature operation is discussed. |
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| Keywords: | Bipolar Transistor Base Low Temperature Transit Time Doping Profile |
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