| 界面热应力对InP/Si键合质量的影响 |
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| 引用本文： | 刘志强,王良臣,于丽娟,郭金霞,伊晓燕,王立彬,陈宇,马龙.界面热应力对InP/Si键合质量的影响[J].固体电子学研究与进展,2008,28(2):172-175. |
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| 作者姓名： | 刘志强 王良臣 于丽娟 郭金霞 伊晓燕 王立彬 陈宇 马龙 |
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| 作者单位： | 中科院半导体研究所集成技术中心,北京,100083 |
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| 基金项目： | 国家高技术研究发展计划(863计划) |
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| 摘 要： | 通过实验和理论计算,分析了InP/Si键合过程中,界面热应力的分布情况、影响键合结果的关键应力因素及退火温度的允许范围。分析结果表明,由剪切应力和晶片弯矩决定的界面正应力是晶片中心区域大面积键合失败的主要原因,为保证良好的键合质量,InP/Si键合退火温度应该在300～350℃范围内选取。具体实验验证表明,该理论计算值与实验结果相一致。最后,在300℃退火条件下,很好地实现了2inInP/Si晶片键合,红外图像显示,界面几乎没有空洞和裂隙存在,有效键合面积超过90%。
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| 关 键 词： | 磷化铟/硅 键合 界面热应力 退火温度 |
Effect of Interfacial Thermal Stresses on the Quality of InP/Si Wafer Bonding |
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| LIU Zhiqiang,WANG Liangchen,YU Lijuan,GUO Jinxia,YI Xiaoyan,WANG Libin,CHEN Yu,MA Long.Effect of Interfacial Thermal Stresses on the Quality of InP/Si Wafer Bonding[J].Research & Progress of Solid State Electronics,2008,28(2):172-175. |
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| Authors: | LIU Zhiqiang WANG Liangchen YU Lijuan GUO Jinxia YI Xiaoyan WANG Libin CHEN Yu MA Long |
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| Affiliation: | LIU Zhiqiang WANG Liangchen YU Lijuan GUO Jinxia YI XiaoyanWANG Libin CHEN Yu MA Long(Institute of Semiconductors,Chinese Academy of Sciences,Beijing,100083,CHN) |
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| Abstract: | Interfacial thermal stresses distribution and value in InP/Si wafer bonding are investigated both theoretically and experementally.The result indicated that interfacial normal stresses play an important role in debonding of wafer center area,and the proper annealing temperature for InP/Si bonding is between 300～350 ℃.The conclusion of theoretic analyses was approved by experiments.Finally,2in InP wafer was successfully bonded to Si substrate under 300 ℃ annealing temperature.No voids were observed in the infrared image,the virtual bonding area is above 90%. |
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| Keywords: | InP/Si wafer bonding interface thermal stress annealing temperature |
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