掺杂和未掺杂LEC GaAs中EL2和位错密度分布 Distributions of EL2 Concentration and Dislocation Density in Si-doped and Undoped LEC GaAs期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

掺杂和未掺杂LEC GaAs中EL2和位错密度分布

引用本文：	杨瑞霞,刘文杰,李光平,华庆恒.掺杂和未掺杂LEC GaAs中EL2和位错密度分布[J].固体电子学研究与进展,1988(3).

作者姓名：	杨瑞霞刘文杰李光平华庆恒

作者单位：	河北工学院 (杨瑞霞，刘文杰)，天津电子材料研究所 (李光平)，天津电子材料研究所(华庆恒)

摘要：	测量比较了掺Si和未掺杂LEC GaAs晶锭不同部位EL2浓度和位错密度分布。结果表明,掺Si样品中EL2浓度径向分布和位错密度径向分布分别为M形和W形,而未掺杂样品中两者均为W形。讨论了两者间不同对应关系的机理。
Distributions of EL2 Concentration and Dislocation Density in Si-doped and Undoped LEC GaAs

Abstract:	We measure and compare the radial distributions of EL2 concentration and dislocation density in Si-doped and undoped LEC GaAs crystals. The results indicate that the radial distributions of EL2 concentration are W-shaped and M-shaped in undoped and Si-doped specimens, respectively, while the distributions of dislocation density are W-shaped in both undoped and Si-doped specimens. The correlations between the distributions of EL2 concentration and dislocation density in Si-doped and undoped specimens are discussed.

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