| 一种新型硅三端负阻器件 |
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| 引用本文： | 郭维廉,于彩虹.一种新型硅三端负阻器件[J].固体电子学研究与进展,1992,12(3):204-210. |
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| 作者姓名： | 郭维廉 于彩虹 |
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| 作者单位： | 天津大学电子工程系 300072
(郭维廉),天津大学电子工程系 300072(于彩虹) |
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| 摘 要： | 提出并研制成一种新型硅三端负阻器件。该器件由一n沟耗尽型MOS管、一横向pnp双极晶体管和一个电阻集成而得。它具有“双负阻”特性和正阻区阻值易于控制等特点。由理论计算出的器件I_c—V_(CB)特性和负阻参数与实验结果符合良好。
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| 关 键 词： | 三端负阻器件 复合或集成器件 |
A New Silicon Three Terminals Device with Negative Resistance |
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| Guo Weilian,Yu Caihong.A New Silicon Three Terminals Device with Negative Resistance[J].Research & Progress of Solid State Electronics,1992,12(3):204-210. |
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| Authors: | Guo Weilian Yu Caihong |
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| Abstract: | In this paper, a new silicon three terminals device with negative resistance has been proposed and fabricated. This device consists of a n-channel depletion mode MOS transistor,a lateral pnp bipolar transistor and a resistor and has the behavior of "dual negative resistance" characteristics and easily controlled resistance in positive resistance region. The theoretical calculating Ic-VCE characteristic and negative resistance parameters are in good agreement with the experimental results. |
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| Keywords: | Three Terminals Negative Resistance Devices Integrated Devices |
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