| 在a-Si:H/a-SiN_x:H超晶格中导电机制的研究(英文) |
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| 引用本文： | 何宇亮,郁彬,赵周英,刘湘娜.在a-Si:H/a-SiN_x:H超晶格中导电机制的研究(英文)[J].固体电子学研究与进展,1989(4). |
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| 作者姓名： | 何宇亮 郁彬 赵周英 刘湘娜 |
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| 作者单位： | 南京大学物理系
(何宇亮，郁彬，赵周英)，南京大学物理系(刘湘娜) |
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| 摘 要： |
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Some Research of Conduction Mechanism in a-Si:H/a-SiN_x :H Superlattices |
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| Abstract: | We have studied the conduction mechanism of a series of a-Si:H/a-SiNx:H multi-layers samples which have an identical sublayer thickness and periodic numbers, except the ratio of N/Si in a-SiNx:H sublayers. It is shown that the temperature characteristic of conductivity of these samples has a kink point in the range of 120-140℃. The kink temperature and the acttivation energy of conductivity are related to the N/Si ratio in the a-SiNx:H sublayers. We recognized preliminarily that the mechanism above and below the kink temperature could be the bulk or the interfacial conduction in a-Si:H well layers. |
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