| 磁控溅射AlN介质MIS栅结构的AlGaN/GaN HEMT |
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| 引用本文： | 任春江,陈堂胜,焦刚,钟世昌,薛舫时,陈辰.磁控溅射AlN介质MIS栅结构的AlGaN/GaN HEMT[J].固体电子学研究与进展,2009,29(3). |
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| 作者姓名： | 任春江 陈堂胜 焦刚 钟世昌 薛舫时 陈辰 |
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| 作者单位： | 南京电子器件研究所,单片集成电路与模块国家级重点实验室,南京,210016 |
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| 摘 要： | 报道了一种X波段输出功率密度达10.4W/mm的SiC衬底AlGaN/GaN MIS-HEMT。器件研制中采用了MIS结构、凹槽栅以及场板,其中MIS结构中采用了磁控溅射的AlN介质作为绝缘层。采用MIS结构后,器件击穿电压由80V提高到了180V以上,保证了器件能够实现更高的工作电压。在8GHz、55V的工作电压下,研制的1mm栅宽AlGaN/GaN MIS-HEMT输出功率达到了10.4W,此时器件的功率增益和功率附加效率分别达到了6.56dB和39.2%。
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| 关 键 词： | 场板 铝镓氮/氮化镓 高电子迁移率晶体管 氮化铝 金属-绝缘体-半导体高电子迁移率晶体管 |
AlGaN/GaN MIS-HEMT with Magnetron Sputtered AlN |
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| REN Chunjiang CHEN Tangsheng JIAO Gang ZHONG Shichang XUE Fangshi CHEN Chen.AlGaN/GaN MIS-HEMT with Magnetron Sputtered AlN[J].Research & Progress of Solid State Electronics,2009,29(3). |
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| Authors: | REN Chunjiang CHEN Tangsheng JIAO Gang ZHONG Shichang XUE Fangshi CHEN Chen |
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| Affiliation: | REN Chunjiang CHEN Tangsheng JIAO Gang ZHONG Shichang XUE Fangshi CHEN Chen(National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electron Devices Institute,Nanjing,210016,CHN) |
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| Abstract: | An AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor(MIS-HEMT)on SiC substrate with 10.4 W/mm power density at X band is reported.MIS configuration using magnetron sputtered AlN as insulator,gate recessing and field plate was applied to device fabrication.By imploying this structure the breakdown voltage of the device was improved from 80 V to over 180 V,leading to an improvement in operating voltage.At 8 GHz and 55 V operating voltage,the fabricated 1 mm gate width AlGaN/GaN MIS-HEM... |
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| Keywords: | field plate AlGaN/GaN HEMT AlN metal-insulator-semiconductor HEMT |
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