| Si离子注入GaAs的红外快速退火 |
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| 引用本文： | 忻尚衡,史常忻,李晓明,陈茵.Si离子注入GaAs的红外快速退火[J].固体电子学研究与进展,1988(3). |
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| 作者姓名： | 忻尚衡 史常忻 李晓明 陈茵 |
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| 作者单位： | 上海交通大学LSI研究中心
(忻尚衡，史常忻，李晓明)，上海交通大学LSI研究中心(陈茵) |
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| 摘 要： | 研究了适用于GaAs离子注入材料的石墨红外快速热退火方法,对Si~+注入GaAs材料进行950℃,6秒快速退火。从测得的电学特性,DLTS和GaAs MESFET的研究结果表明,红外快速热退火工艺可获得高质量的有源层以及抑制电子陷阱EL2的外扩散。
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Characteristics of Rapid Annealed Si~+ -Implanted GaAs Using a Graphit Infrared Source |
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| Abstract: | Electrical properties of Si+-implanted GaAs activated by short term-graphit infrared heater annealing have been investigated.The best results are produced by annealing at 950℃ for 6s. From the results of DLTS and GaAs MESFETs fabricated on the active layers by RTA, It is shown that the rapid thermal-annealing technology offers the advantages of the slight or negligible implanted dopant diffusion and the suppression of the EL2 outdiffusion. |
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