| 半导体中非平衡载流子的输运过程(Ⅰ) |
| |
| 引用本文： | 刘古,蒋建飞,陈瑞熊.半导体中非平衡载流子的输运过程(Ⅰ)[J].固体电子学研究与进展,1987(1). |
| |
| 作者姓名： | 刘古 蒋建飞 陈瑞熊 |
| |
| 作者单位： | 浙江大学
(刘古)，上海交通大学
(蒋建飞)，广西师范大学(陈瑞熊) |
| |
| 摘 要： | 在描述载流子输运过程的玻尔兹曼方程的碰撞项中考虑了带间跃迁的贡献,从而将它推广到存在非平衡载流子的情况。由此导出了非平衡载流子寿命,复合几率的统计表达式,以及包括产生-复合过程的电荷连续性方程和稳态输运过程的电流方程。
|
Transport of Non-equilibrium Carriers in Semiconductors(Ⅰ) |
| |
| Abstract: | The interband transition is taken into account in the collision term of the Boltz-mann equation which describes the carrier transport process in semiconductors. Therefore the equation is extented to the case where non-equilibrium carriers exist, from which we here derived the statistical expressions of life-time and the recombination probability, the charge continuity equation including carrier generation-recombination as well as the current equation of steady transport process. |
| |
| Keywords: | |
| 本文献已被 CNKI 等数据库收录！ |
|
