| S波段100W硅脉冲功率晶体管 |
| |
| 引用本文： | 傅义珠,李相光,张树丹,王佃利,王因生,康小虎,姚长军.S波段100W硅脉冲功率晶体管[J].固体电子学研究与进展,2000,20(2):123-127. |
| |
| 作者姓名： | 傅义珠 李相光 张树丹 王佃利 王因生 康小虎 姚长军 |
| |
| 作者单位： | 南京电子器件研究所,210016 |
| |
| 摘 要： | 报道了一种高增益高效率 S波段硅脉冲功率晶体管的研制结果。该器件在 f=2 .4～ 2 .6GHz,D=1 0 % ,τp=1 0 0 μs,Vc=36V条件下输出功率 1 0 0 W、增益 9d B、效率 50 %。在 f=2 .6GHz短脉宽条件下输出功率 1 60 W、增益 8.0 d B、效率 60 %。
|
| 关 键 词： | 硅 微波功率晶体管 多晶硅发射极 动态镇流电阻 |
| 修稿时间： | 1999-04-01 |
S-band 100 W Silicon Pulsed Power Transistor |
| |
| Fu,Yizhu,Li,Xiangguang,Zhang,Shudan,Wang,Dianli,Wang,Yinsheng,Kang,Xiaohu,Yao,Changjun.S-band 100 W Silicon Pulsed Power Transistor[J].Research & Progress of Solid State Electronics,2000,20(2):123-127. |
| |
| Authors: | Fu Yizhu Li Xiangguang Zhang Shudan Wang Dianli Wang Yinsheng Kang Xiaohu Yao Changjun |
| |
| Abstract: | This paper presents the manufacturing result of a S-band silicon pulsed power transistor with high G p and high η c. This transistor produces 100 Watts of output power with 9 dB of gain and 50% of collector efficiency in the operation conditions of f =2.4～2.6 GHz, D =10%, τ p=100 μs and V c=36 V and 160 Watts of output power with 8.0 dB of gain and 60% collector efficiency at f =2.6 GHz for short pulsed operation. |
| |
| Keywords: | silicon microwave power transistor polysilicon emitter dynamic ballast resistors |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
