| a-GaP薄膜的制备及其光学性质研究(英文) |
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| 引用本文： | 徐剑虹,陈坤基,朱恩均.a-GaP薄膜的制备及其光学性质研究(英文)[J].固体电子学研究与进展,1989(4). |
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| 作者姓名： | 徐剑虹 陈坤基 朱恩均 |
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| 作者单位： | 南京大学物理系
(徐剑虹，陈坤基)，北京大学计算机科学系(朱恩均) |
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| 摘 要： |
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Preparation and Investigation of a-GaP Films and Its Optical Properties |
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| Abstract: | We present a new deposition method of amorphous GaP films-Plasma Enhanced Chemical Transport Deposition (PECTD) and have successfully obtained a series of a-GaP films with a mirror-like surface and a stable chemical structure. The character of structure and composition ratio of a-GaP films have been investigated by XRD-spectra, IR absorption spectra and XPS. The results indicate that the stoichiometric composition of a-GaP films can be controlled by changing the deposition conditions such as the pressure in the deposition region, the temperature in the source region and the density of r.f. power.The optical properties of a-GaP films have been also studied systematically. The value of Egopt is aboat 1.6eV -which is greater than that reported by other group. We temporarily interpret this phenomenon by means of the existence of H and Cl atoms in a-GaP structure network. A long absorption band-tail in the energy band gap of a-GaP films was discovered. |
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