MOSFET-only switched-capacitor circuits in digital CMOS technology |
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Authors: | Yoshizawa H Yunteng Huang Ferguson PF Jr Temes GC |
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Affiliation: | Oregon State Univ., Corvallis, OR; |
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Abstract: | Design techniques are described for the realization of precision high linearity switched-capacitor (SC) stages constructed entirely from MOS transistors. The proposed circuits use the gate-to-channel capacitance of MOSFET's for realizing all capacitors. As a result, they can be fabricated in any inexpensive basic digital CMOS technology, and the chip area occupied by the capacitors can be reduced. A number of different SC stages have been designed and fabricated using the proposed techniques. These included SC amplifiers, gain/loss stages, and data converters. Both the simulations and the experimental results obtained indicate that very high linearity (comparable to that achieved using analog fabrication processes with two poly-Si layers) can be achieved in these circuits using basic CMOS technology |
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