| Abstract: | Direct growth of graphene films on functional substrates is immensely beneficial for the large‐scale applications of graphene by avoiding the transfer‐induced issues. Notably, the selective growth of patterned graphene will further boost the development of graphene‐based devices. Here, the direct growth of patterned graphene on the c‐plane of nanopatterned sapphire substrate (NPSS) is realized and the superiority of the patterned graphene for high‐performance ultraviolet light‐emitting diodes (UV‐LED) is demonstrated. As confirmed by density functional theory calculations and analog simulations, compared to the concave r‐plane the flat c‐plane of NPSS is characterized by a lower active barrier for methane decomposition and carbon species diffusion, as well as a greater supply of carbon precursor for graphene growth. The synthesized patterned graphene on the c‐plane of NPSS is verified to be monolayer and high quality. The patterned graphene enables the selective and well‐aligned nucleation of aluminium nitride (AlN) to promote rapid epitaxial lateral overgrowth of single‐crystal AlN films with low dislocation density. Consequently, the fabricated UV‐LED demonstrates high luminescence intensity and stability. The method is suitable for obtaining various patterned graphene by substrate design, which will allow for greater progress in the cutting‐edge applications of graphene. |
