Van der Waals Nanowires with Continuously Variable Interlayer Twist and Twist Homojunctions |
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| Authors: | Peter Sutter Juan-Carlos Idrobo Eli Sutter |
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| Affiliation: | 1. Department of Electrical & Computer Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588 USA;2. Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831 USA;3. Department of Mechanical & Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588 USA |
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| Abstract: | Moiré patterns at van der Waals interfaces between twisted 2D crystals give rise to distinct optoelectronic excitations, as well as, narrowly dispersive bands responsible for correlated electron phenomena. Contrasting with the conventional, mechanically stacked planar twist moirés, recent work shows twisted van der Waals interfaces spontaneously formed in nanowires of layered crystals, where Eshelby twist due to axial screw dislocations stabilizes a chiral structure with small interlayer rotation. Here, the realization of tunable twist in germanium(II) sulfide (GeS) van der Waals nanowires is reported. Tapered nanowires host continuously variable interlayer twist. Homojunctions between dislocated (chiral) and defect-free (achiral) segments are obtained by triggering the emission of axial dislocations during growth. Measurements across such junctions, implemented here using local absorption and luminescence spectroscopy, provide a convenient tool for detecting twist effects. The results identify a versatile system for 3D twistronics, probing moiré physics, and for realizing moiré architectures without equivalent in planar systems. |
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| Keywords: | interlayer twist moiré pattern nanowires screw dislocation van der Waals crystals |
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