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Graphene/SiO2/p‐GaN Diodes: An Advanced Economical Alternative for Electrically Tunable Light Emitters |
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| Authors: | Che‐Wei Chang Wei‐Chun Tan Meng‐Lin Lu Tai‐Chun Pan Ying‐Jay Yang Yang‐Fang Chen |
| Affiliation: | 1. Department of Physics, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan, Republic of China;2. Graduate Institute of Electronics Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan, Republic of China;3. Institute of Optoelectronic Sciences, National Taiwan Ocean University, No.2, Pei‐Ning Road, Keelung 224, Taiwan, Republic of China;4. Center for Emerging Material and Advanced Devices, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan, Republic of China |
| Abstract: | Advanced materials that combine novel functionality and ease of applicability are central to the development of light‐emitting diodes (LEDs), which is of ever increasing commercial importance. Here a new metal‐insulator‐semiconductor (MIS) LED structure that combines economical fabrication with novel device properties is reported. The presented MIS‐LED consists of a graphene electrode on p‐GaN substrate separated by an insulating SiO2 layer. It is found that the MIS‐LED possesses a unique tunability of the electroluminescence spectra depending on the bias conditions. Tunnel injection from graphene into the p‐GaN can explain the difference in luminescence spectra under forward and reverse bias. The demonstrated MIS‐LED expands the use of graphene and also possibly allows the direct integration of light emitters with other circuit elements. |
| Keywords: | graphene electroluminescence gallium compounds light‐emitting diodes |
