| 一种高电源抑制比的带隙基准电压源的设计 |
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| 引用本文： | 屠莉敏,何颖,易峰.一种高电源抑制比的带隙基准电压源的设计[J].电子与封装,2014(11):31-33. |
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| 作者姓名： | 屠莉敏 何颖 易峰 |
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| 作者单位： | 中国电子科技集团公司第58研究所,江苏无锡,214035 |
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| 摘 要： | 提出一种采用Bi CMOS工艺的低功耗、高电源抑制比、低温度系数的带隙基准电压源(BGR)设计。该模块基本原理是利用具有正温度系数的热电压VT和具有负温度系数的双极型晶体管VBE叠加产生与温度和电源电压无关的基准电压VREF。该设计中带隙基准电压在25℃时,为1.242 V左右。温度从-40~120℃变化时,带隙基准电压变化10 m V,可以计算出温度系数为60×10-6℃-1。
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| 关 键 词： | 带隙基准源 与绝对温度成正比 电源抑制比 低温度系数 |
Design of a High PSRR Bandgap Voltage Reference |
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| TU Limin,HE Ying,YI Feng.Design of a High PSRR Bandgap Voltage Reference[J].Electronics & Packaging,2014(11):31-33. |
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| Authors: | TU Limin HE Ying YI Feng |
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| Affiliation: | (China Electronics Technology Group Corporation No.58 Research Institute, Wuxi 214035, China) |
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| Abstract: | A high PSRR and low temperature coefficient Bi CMOS bandgap reference was presented. In the design, the cascade current mirror is used in the circuit, and the output of the OPAMP is used for the bias of itself and to drive the next stage, in the same time PTAT temperature compensate is carried out. In the design of the paper, the output voltage is 1.242 V, while the temperature is 25 ℃. With the temperature range of-40~120 ℃, the bandgap reference voltage difference is 10 m V, which demonstrates the 60×10-6 ℃-1temperature ratio. |
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| Keywords: | bandgap voltage reference proportional to absolute temperature power supply rejection rate low temperature coefifcient |
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