| 硅基PbSe／BaF2／CaF2薄膜及其光电特性 |
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| 引用本文： | 金进生,常勇,等.硅基PbSe／BaF2／CaF2薄膜及其光电特性[J].红外与毫米波学报,2001,20(2):154-156. |
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| 作者姓名： | 金进生 常勇 |
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| 作者单位： | [1]浙江大学物理系，浙江杭州310028 [2]中国科学院上海技术物理研究所红外物理国家重点实验室，上海200083 |
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| 基金项目： | 浙江省自然科学基金(No.696027)资助项目 |
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| 摘 要： | 采用分子束外延方法在Si(111)衬底上生长了PbSe/BaF2/CaF2薄膜，扫描电镜和X－光衍射分析显示，通过生长BaF2/CaF2缓冲层的方法，在Si(111)衬底上外延的PbSe薄膜晶体质量高，PbSe表面光亮，无形裂现象发生，X－光衍射峰峰宽窄（153arcs)。外延生长的PbSe薄膜被应用于制作光电二极管，首次采用热蒸发金属铝膜在PbSe表面形成Al-PbSe肖特基结光电二极管，获得了比Pb-PbSe肖特基结更为稳定和理想的电流－电压特性曲线。
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| 关 键 词： | PbSe薄膜 BaF2／CaF2缓冲层 肖特基结 I－V特性 分子束外延 光电二极管 Si（111） |
| 修稿时间： | 1999年9月7日 |
PHOTOELECTRIC PROPERTIES
OF PbSe/BaF2/CaF2 FILMS ON Si(111) |
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| JIN Jin-Sheng.PHOTOELECTRIC PROPERTIES
OF PbSe/BaF2/CaF2 FILMS ON Si(111)[J].Journal of Infrared and Millimeter Waves,2001,20(2):154-156. |
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| Authors: | JIN Jin-Sheng |
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| Abstract: | PbSe films were grown on Si(111) by incorporation of BaF 2/CaF 2 buffers using molecular beam epitaxy. The measurements of both scanning electronic microscopy and high resolution X ray diffraction showed high crystalline quality of the PbSe films. The surface of PbSe was mirror like and no cracks were observed. The full width at half maximum of PbSe diffraction peak was only 153 arcsec. The epitaxial PbSe films were used to fabricate photodiodes. For the first time, metallic aluminum was used to form Al PbSe Schottky diodes, which demonstrated better and more stable current voltage characteristics than that obtained from Pb PbSe Schottky diodes. |
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| Keywords: | PbSe films BaF 2/CaF 2 buffer Schottky diode current voltage characteristics |
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