布拉格反射波导光子晶体宽光谱量子阱激光器

半导体宽谱激光在传感、光谱学等领域有着重要的应用.传统半导体宽谱激光器主要采用宽增益材料和全反射波导,采用简单量子阱结构制备宽谱激光器一直是个难题.作者首次证明了一种基于布拉格反射波导一维光子晶体的新型量子阱宽谱激光器,其结构主要包括In Ga As/Ga As量子阱和上下布拉格反射镜,通过偏离解理实现激光输出.研究发现在偏离角7°时,器件展现宽谱超辐射发光二极管特性,4.4°偏离角时实现了宽光谱激光输出,光谱宽度达到33.7 nm,连续输出功率36 m W.本研究为探索新型量子阱宽谱激光器提出了一种新的技术途径.

Quantum well lasers with broad spectra based on Bragg reflection waveguide

Semiconductor lasers with broad spectra are crucial for sensing, spectroscopy and biomedical imaging, etc. Currently, the broadband semiconductor lasers are majority based on the broad gain material and total interface reflection (TIR) waveguide. It is still a challenge to realize the broadband semiconductor lasers based on the simple and mature quantum well (QW) material. In this paper, a new type broadband QW laser using Bragg reflection waveguide with a deviation angle from cleaving crystal faces was demonstrated. The device consists of the InGaAs/GaAs QWs, top and bottom Bragg reflectors. It was found that it shows the characteristics of superluminescent diode (SLD) with a spectrum width of 135 nm for the device with a deviation angle of 7°. The spectrum width of 33.7 nm was achieved with an emission power of 36 mW from one facet for a deviation angle of 4.4°. This work supplies a new possible approach for the development of high performance QW broadband lasers.