石墨烯异质结及其光电器件的研究进展

石墨烯是具有高迁移率、高热导率、高比表面积、高透过率及良好的机械强度等特性的二维材料，在光电子器件领域被广泛用作透明电极及电荷传输层等。但由于石墨烯是零带隙材料，为半金属性，限制了其在半导体光电子器件领域的应用。为更加切合半导体产业应用的要求，构建异质结已经成为相关领域实现应用的重要途径。国际上已有较多团队开展了石墨烯异质结相关研究，目前已有较多报道。本文从石墨烯的性质出发，讲述了石墨烯异质结的发展历程，制备方法，并从材料制备与器件结构的角度总结了基于石墨烯异质结光电子器件的研究进展。最后，对石墨烯异质结在光电子器件领域的发展进行了展望。

Research Progress of Graphene Heterojunctions and Their Optoelectronic Devices

Graphene is a two-dimensional material with high mobility, high thermal conductivity, high transmittance, large specific surface area, and good mechanical strength. It is widely utilized as a transparent electrode and charge-transporting layer in optoelectronic devices. However, graphene is a zero-bandgap material with inherent semi-metallic properties that limit its application in the field of semiconductor optoelectronic devices. The construction of heterojunctions has become a critical means to meet the requirements of semiconductor applications in specific industries. To date, many different graphene heterojunction structures have been reported owing to the wide selection of heterojunction materials. Based on the properties of graphene, this study describes the development and preparation methods of graphene heterojunctions and summarizes the research progress of photoelectronic devices based on graphene heterojunctions from the perspective of material preparation and device structure. Lastly, the development of graphene heterojunctions in optoelectronic devices is discussed.