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THz交错波导慢波结构高频损耗研究
引用本文:王晨曦,杨 军,李浩光,邓光晟,尹治平,吕国强.THz交错波导慢波结构高频损耗研究[J].太赫兹科学与电子信息学报,2016,14(1):18-22.
作者姓名:王晨曦  杨 军  李浩光  邓光晟  尹治平  吕国强
作者单位:School of Instrument Science and Opto-electronic Engineering,Hefei University of Technology,Hefei Anhui 230009,China,Academy of Photoelectric Technology,Hefei University of Technology,Hefei Anhui 230009,China,School of Instrument Science and Opto-electronic Engineering,Hefei University of Technology,Hefei Anhui 230009,China,Academy of Photoelectric Technology,Hefei University of Technology,Hefei Anhui 230009,China,Academy of Photoelectric Technology,Hefei University of Technology,Hefei Anhui 230009,China and Academy of Photoelectric Technology,Hefei University of Technology,Hefei Anhui 230009,China
摘    要:利用等效电导率方法对310 GHz的双栅交错波导慢波结构中电磁信号的传输损耗进行了仿真研究,比较了不同导体表面粗糙度和不同谐波造成的高频损耗的影响。仿真结果表明表面粗糙度会使传输信号严重衰减,频率相同的-1和+1次空间谐波传输损耗也有较大差异,传输-1次空间谐波时的导体单位损耗更大,且随表面粗糙度增加,损耗增加速度更快。模拟了不同的粗糙度对慢波结构增益、带宽等工作性能参数的影响,结果显示高频损耗会使增益下降、带宽降低。

关 键 词:太赫兹  交错波导  慢波结构  高频损耗
收稿时间:2015/4/22 0:00:00
修稿时间:2015/5/31 0:00:00

Investigation on loss characteristics of staggered double vane slow-wave structure
WANG Chenxi,YANG Jun,LI Haoguang,DENG Guangsheng,YIN Zhiping and LV Guoqiang.Investigation on loss characteristics of staggered double vane slow-wave structure[J].Journal of Terahertz Science and Electronic Information Technology,2016,14(1):18-22.
Authors:WANG Chenxi  YANG Jun  LI Haoguang  DENG Guangsheng  YIN Zhiping and LV Guoqiang
Abstract:
Keywords:
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