| a—SiNx：H薄膜对a—Si：H TFT阈值电压的影响 |
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| 引用本文： | 王长安,熊智斌.a—SiNx：H薄膜对a—Si：H TFT阈值电压的影响[J].光电子技术,1997,17(1):45-49. |
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| 作者姓名： | 王长安 熊智斌 |
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| 作者单位： | 华中理工大学固体电子学系!武汉430074 |
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| 摘 要： | 介绍了测定a－Si：HTFT闽值电压的实验方法。重点研究了改变a－SiNx：H薄膜淀积时反应气体NH3／SiH4流速比以及a－SiNx:H膜厚对a－Si：HTFT阈值电压的影响。对实验结果进行了分析。实验结果表明：a－Si:HTFT的阈值电压随a－SiNx：H的膜厚增加而增大；增大X－SiNx：H薄膜淀积时NH3／SiH4气体流速比，可明显减小a-Si:HTFT的阈值电压。
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| 关 键 词： | 阈值电压 氢化非晶硅 薄膜晶体管 |
Influence of a-SiN_x: H Film on the Threshold Voltage of a-Si: H TFT |
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| Wang Changan,Xiong Zhibin, Zhang Shaoqiang,Zhao Bofang, Xu Zhongyang.Influence of a-SiN_x: H Film on the Threshold Voltage of a-Si: H TFT[J].Optoelectronic Technology,1997,17(1):45-49. |
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| Authors: | Wang Changan Xiong Zhibin Zhang Shaoqiang Zhao Bofang Xu Zhongyang |
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| Abstract: | The experiment method used for determining the threshoId voltage of a-Si : H TFT is introduced. The effect of the thickness of a-SiNx: H film on the threshold voltage of a-Si: H TFT is investigated. The influence of the reactive gas flow rate ratio,under which the a-SiNx: H film was deposited,on the threshold voltage of a-Si: H TFT is emphatically investigated- The experiment results show that the threshold voltage of a-Si: H TFT is increased with increasing the thickness of the a-SiNx: H film,and reduced apparently with increasing the reactive gas flow rate ratio under which the a-SiNx: H films was deposited |
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| Keywords: | a-Si:H TFT a-SiN_x:H film threshold voltage |
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