| 激光探针监测半导体器件内自由载流子浓度调制效应 |
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| 引用本文： | 刘志存.激光探针监测半导体器件内自由载流子浓度调制效应[J].四川激光,2005,26(2):18-19. |
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| 作者姓名： | 刘志存 |
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| 作者单位： | 陕西师范大学物理学与信息技术学院 陕西西安710062 |
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| 摘 要： | 介绍了基于自由载流子对介质折射率调制作用,而建立的监测半导体器件内自由载流子变化情况的实验装置,该装置能实时反映自由载流子变化情况,且对原电路无任何影响。本方法适用于硅和砷化镓材料的电子和光电子器件,也显示了在测量集成电路内部有源器件特性方面的潜在应用前景。
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| 关 键 词： | 干涉 折射率 自由载流子 |
| 文章编号： | 0253-2743(2005)02-0018-02 |
| 修稿时间： | 2004年5月20日 |
Detection of carrier density modulation in semiconductor device s using laser beam probe |
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| LIU Zhi-cun.Detection of carrier density modulation in semiconductor device s using laser beam probe[J].Laser Journal,2005,26(2):18-19. |
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| Authors: | LIU Zhi-cun |
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| Abstract: | An experimental method to observe varying free-carrier in semiconductor device was built,which is based on the free-carrier's optoelectronic effect.With this method,the varying free-carrier can be observed timely and the state of the original circuit not been affected.It is applicable to electronic and optoelectronic devices fabricated by Si and GaAs materials.It also shows the potential application in measuring parameters of active devices inside integrated circuites. |
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| Keywords: | interference refractive index free-carrier |
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