Wideband quantum-dash-in-well superluminescent diode at 1.6 /spl mu/m |
| |
| Authors: | HS Djie CE Dimas BS Ooi |
| |
| Affiliation: | Electr. & Comput. Eng. Dept., Lehigh Univ., Bethlehem, PA, USA; |
| |
| Abstract: | We demonstrate broadband superluminescent diode at /spl sim/1.6-/spl mu/m peak emission wavelength using InAs-InAlGaAs quantum-dash-in-well structure on InP substrate. The fabricated device exhibits the close-to-Gaussian emission with a bandwidth of up to 140 nm. The device produces a low spectrum ripple of 0.3dB and an integrated power of 1.7 mW with the corresponding bandwith of 110 nm measured at 20 /spl deg/C under 8 kA/cm/sup 2/. |
| |
| Keywords: | |
|
|
