| Solid-phase Crystallization of Amorphous Silicon Films by Rapid Thermal Annealing |
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| 作者姓名： | JINRui-min LUJing-xiao LIRui WANGHai-yan FENGTuan-hui |
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| 作者单位： | Lab.ofMater.Phys.ofMEC,ZhengzhouUniversity,Zhengzhou450052,CHN |
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| 摘 要： | The morphous silicon films prepared by PECVD at substrate temperatures of 30℃ have been crystallized by rapid thermal annealing method, the budget of time-temperature in the annealing process is 600℃ for 120s, 850℃ for 120s, and 950℃ for 120s. The results indicate the crystallization at 850℃ and 950℃ are better as shown in micro-Raman scattering and scanning electronic microscope.
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| 关 键 词： | 固相晶化 非晶硅 快速热退火 PECVD |
| 收稿时间： | 2004/7/23 |
Solid-phase Crystallization of Amorphous Silicon Films by Rapid Thermal Annealing |
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| JINRui-min LUJing-xiao LIRui WANGHai-yan FENGTuan-hui.Solid-phase Crystallization of Amorphous Silicon Films by Rapid Thermal Annealing[J].Semiconductor Photonics and Technology,2005,11(1):37-39. |
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| Authors: | JIN Rui-min LU Jing-xiao LI Rui WANG Hai-yan FENG Tuan-hui |
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| Abstract: | The morphous silicon films prepared by PECVD at substrate temperatures of 30℃have been crystallized by rapid thermal annealing method, the budget of time-temperature in the annealing process is 600 ℃for 120 s, 850℃for 120 s, and 950℃for 120 s. The results indicate the crystallization at 850℃and 950 ℃are better as shown in micro-Raman scattering and scanning electronic microscope. |
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| Keywords: | Amorphous silicon Solid-phase crystallization Rapid thermal annealing |
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