| Solid-phase Crystallization of Hydrogenated Amorphous Silicon on Glass Substrates |
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| 作者姓名： | JIN Rui-min LU Jing-xiao FENG Tuan-hui YANG Shi-e ZHANG Li-wei |
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| 作者单位： | Key Laboratory of Material Physics for Ministry of Education, Zhengzhou University, Zhengzhou 450052, CHN |
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| 摘 要： | Amorphous silicon films prepared by PECVD on glass substrate have been crystallized by conventional furnace annealing and rapid thermal annealing（RTA）, respectively. From the Raman spectra, X- ray diffraction and scanning electron microscope, it is found that the grain size is crystallized at 850 ℃ in both techniques. The thin film made by RTA is smooth and of perfect structure, the thin film annealed by FA has a highly structural disorder. An average grain size of about 30 nm is obtained by both techniques.
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| 关 键 词： | 半导体技术 材料 PECVD 硅薄膜 |
| 文章编号： | 1007-0206（2006）01-0015-03 |
| 收稿时间： | 2005-09-07 |
| 修稿时间： | 2005-10-12 |
Solid-phase Crystallization of Hydrogenated Amorphous Silicon on Glass Substrates |
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| JIN Rui-min LU Jing-xiao FENG Tuan-hui YANG Shi-e ZHANG Li-wei.Solid-phase Crystallization of Hydrogenated Amorphous Silicon on Glass Substrates[J].Semiconductor Photonics and Technology,2006,12(1):15-17,29. |
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| Authors: | JIN Rui-min LU Jing-xiao FENG Tuan-hui YANG Shi-e ZHANG Li-wei |
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| Abstract: | Amorphous silicon films prepared by PECVD on glass substrate have been crystallized by conventional furnace annealing and rapid thermal annealing(RTA), respectively. From the Raman spectra, X-ray diffraction and scanning electron microscope, it is found that the grain size is crystallized at 850℃ in both techniques. The thin film made by RTA is smooth and of perfect structure, the thin film annealed by FA has a highly structural disorder. An average grain size of about 30nm is obtained by both techniques. |
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| Keywords: | PECVD A-Si: H film Furnace annealing Rapid thermal annealing Grain size |
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