Luminescent Properties of Nanometer Si with Embedded Structure

Blue luminescence at about 431nm is obtained from epitaxial silicon after C^ implantation,annealing in hydrogen ambience and chemical etching sequentially. When annealed in nitrogen ambience and etched accordingly, there is a much narrower peak at about 430nm. During C^ implantation,C=O compounds are introduced into and embedded in the surface of nanometer Si formed during annealing,at last, nanometer silicon with embedded structure is formed,which contributes to the blue emission.

Luminescent Properties of Nanometer Si with Embedded Structure

Blue luminescence at about 431 nm is obtained from epitaxial silicon after C implantation,annealing in hydrogen ambience and chemical etching sequentially. When annealed in nitrogen ambience and etched accordingly, there is a much narrower peak at about 430 nm. During C implantation,C= O compounds are introduced into and embedded in the surface of nanometer Si formed during annealing, at last, nanometer silicon with embedded structure is formed, which contributes to the blue emission.