| Analysis and Simulation of S-shaped Waveguide in Silicon-on-insulator |
| |
| 作者姓名： | WANG Zhang-tao FAN Zhong-cao XIA Jin-song CHEN Shao-wu Yu Jinzhong |
| |
| 作者单位： | State Key Laboratory on Integrated optoelectronics，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，CHN |
| |
| 基金项目： | 国家自然科学基金，国家重点基础研究发展计划(973计划) |
| |
| 摘 要： | The simulation and analysis of S-shaped waveguide bend are presented.Bend radius larger than 30 mm assures less than 0.5 dB radiation loss for a 4-μm-wide silicon-on-insulator waveguide bend with 2-μm etch depth.Intersection angle greater than 20° provides negligible crosstalk (<-30 dB) and very low insertion loss.Any reduction in bend radius and intersection angle is at the cost of the degradation of characteristics of bent waveguide and intersecting waveguide, respectively.
|
| 关 键 词： | BPM S形状 硅上绝缘体 波导 |
| 收稿时间： | 2003/7/25 |
Analysis and Simulation of S-shaped Waveguide in Silicon-on-insulator |
| |
| WANG Zhang-tao,FAN Zhong-cao,XIA Jin-song,CHEN Shao-wu,Yu Jinzhong.Analysis and Simulation of S-shaped Waveguide in Silicon-on-insulator[J].Semiconductor Photonics and Technology,2004,10(2):78-81. |
| |
| Authors: | WANG Zhang-tao FAN Zhong-cao XIA Jin-Song CHEN Shao-wu Yu Jinzhong |
| |
| Abstract: | The simulation and analysis of S-shaped waveguide bend are presented.Bend radius larger than 30 mm assures less than 0.5 dB radiation loss for a 4-μm-wide silicon-on-insulator waveguide bend with 2-μm etch depth.Intersection angle greater than 20° provides negligible crosstalk (＜-30 dB) and very low insertion loss.Any reduction in bend radius and intersection angle is at the cost of the degradation of characteristics of bent waveguide and intersecting waveguide, respectively. |
| |
| Keywords: | BPM S-shaped bend Silicon-on-insulator |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
