| Growth Front Evolution of GaN Thin Films on Sapphire Substrate During HVPE |
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| 作者姓名： | LU Dian-qing LI Xin-hua LIU Xue-dong |
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| 作者单位： | Dept. of Math. and Phys. , Huaihai Institute of Technology, Lianyungang 222005, CHN |
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| 基金项目： | Research Projects of H uaihai Institute of Technology（Z2004031）. |
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| 摘 要： | The growth front evolution of GaN thin films deposited on sapphire substrate by hydride vapor phase epitaxity has been studied with atomic force microscope. The evolution of the surface morphology presents four features of stage with the growth process. In initial growth stage, the surface is granular, and the typical grain diameter is about 250nm for t =0.1min. 3D growth plays a key role before the films come up to full coalescence, which causes a rough surface. After 0.1min the growth dimension decreases with the increase of lateral over growth, the surface roughness obviously decreases. From 0.4min to 3min, the growth front roughness increases gradually, and the evolution of the surface roughness exhibits the characteristics of self-affined fractal. Beyond 3min, the root-mean-square decreases gradually, which means the deposition behavior from hyper-2D growth gradually turns into layer growth mode with the increase of growth time.
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| 关 键 词： | GaN薄膜 氢化物蒸汽 取向附生 晶体生长 形态学 |
| 文章编号： | 1007-0206（2005）04-0221-04 |
| 收稿时间： | 2005-03-24 |
| 修稿时间： | 2005-04-19 |
Growth Front Evolution of GaN Thin Films on Sapphire Substrate During HVPE |
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| LU Dian-qing LI Xin-hua LIU Xue-dong.Growth Front Evolution of GaN Thin Films on Sapphire Substrate During HVPE[J].Semiconductor Photonics and Technology,2005,11(4):221-224. |
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| Authors: | LU Dian-qing LI Xin-hua LIU Xue-dong |
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| Abstract: | The growth front evolution of GaN thin films deposited on sapphire substrate by hydride vapor phase epitaxity has been studied with atomic force microscope. The evolution of the surface morphology presents four features of stage with the growth process. In initial growth stage, the surface is granular, and the typical grain diameter is about 250 nm for t =0.1 min. 3D growth plays a key role before the films come up to full coalescence, which causes a rough surface. After 0. 1 min the growth dimension decreases with the increase of lateral over growth, the surface roughness obviously decreases. From 0.4 min to 3 min, the growth front roughness increases gradually, and the evolution of the surface roughness exhibits the characteristics of self-affined fractal. Beyond 3 min, the root-mean-square decreases gradually, which means the deposition behavior from hyper-2D growth gradually turns into layer growth mode with the increase of growth time. |
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| Keywords: | GaN Hydride vapor phase epitaxy Growth front evolution |
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