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| B—implantation and Annealing for SiGe Epilayers^①② | |
| 作者姓名： | JIANG R L LIU W P JIANG N ZHU S M HU L H ZHENG Y D |
| 作者单位： | JIANG R L:Dept. of Physics, Nanjing University, Nanjing 210093, CHN LIU W P:Dept. of Physics, Nanjing University, Nanjing 210093, CHN JIANG N:Dept. of Physics, Nanjing University, Nanjing 210093, CHN ZHU S M:Dept. of Physics, Nanjing University, Nanjing 210093, CHN HU L H:Dept. of Physics, Nanjing University, Nanjing 210093, CHN ZHENG Y D:Dept. of Physics, Nanjing University, Nanjing 210093, CHN |
| 基金项目： | Supported by National High Technology Research & Development Project [No.863-307-06-05(05)] of China. |
| 摘 要： | |
| 关 键 词： | 锗化硅 硼注入技术 退火 放射性 添加技术 |
| 收稿时间： | 1997/8/22 |
B-implantation and Annealing for SiGe Epilayers |
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| JIANG R L,LIU W P,JIANG N,ZHU S M,HU L H,ZHENG Y D.B-implantation and Annealing for SiGe Epilayers[J].Semiconductor Photonics and Technology,1997,3(4):286-289. | |
| Abstract: | Si0.8Ge0.2strained epilayer were grown on Si substrates by rapid thermal process/very low pressure-chemical vapor deposition(RTP/VLP-CVD)and implanted with boron at 40keV,a dosage of 2.5×10^4cm^-2.Rapid thermal annealing(RTA)and steady-state furnace annealing with different temperature and time period were performed for comparison.Results indicate that RTA is better than furnace annealing.After RTA at750℃-850℃ for 10 s or at 700℃for 40s，the implantation induced damage can be removed,the carrier mobility was about 300cm^2/V·s and the activity was nearly 100%. |
| Keywords: | Activity Annealing B-implantation Doping Technique SiGe/Si Heterostructures |
