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P-channel Ge/Si Hetero-nanocrystal Based MOSFET Memory
作者姓名:YANG Hong-guan  ZHOU Shao-hua  ZENG Yun  SHI Yi
作者单位:1. Dept. of Appl. Phys.,Hunan University,Changsha 410082,CHN; 2.Dept. of Phys.,Nanjing University,Nanjing 210093,CHN
基金项目:湖南大学校科研和教改项目
摘    要:The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunneling oxide T_ox=2nm and the dimensions of Si- and Ge-nanocrystal D_Si=D_Ge=5nm, the retention time of this device can reach ten years(~1×10~8s) while the programming and erasing time achieve the orders of microsecond and millisecond at the control gate voltage |V_g|=3V with respect to N-wells, respectively. Therefore, this novel device, as an excellent nonvolatile memory operating at room temperature, is desired to obtain application in future VLSI.

关 键 词:半导体技术  纳米晶体  场效应管  逻辑排列  存储单元
文章编号:1007-0206(2005)04-0244-04
收稿时间:2005-06-27
修稿时间:2005-07-21

P-channel Ge/Si Hetero-nanocrystal Based MOSFET Memory
YANG Hong-guan,ZHOU Shao-hua,ZENG Yun,SHI Yi.P-channel Ge/Si Hetero-nanocrystal Based MOSFET Memory[J].Semiconductor Photonics and Technology,2005,11(4):244-247.
Authors:YANG Hong-guan  ZHOU Shao-hua  ZENG Yun  SHI Yi
Abstract:The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunneling oxide Tox = 2 nm and the dimensions of Si- and Ge-nanocrystal Dsi = DGe = 5 nm, the retention time of this device can reach ten years(~1 × 108 s) while the programming and erasing time achieve the orders of microsecond and millisecond at the control gate voltage | Vg | = 3 V with respect to N-wells,respectively. Therefore, this novel device, as an excellent nonvolatile memory operating at room temperature,is desired to obtain application in future VLSI.
Keywords:Ge/Si  Hetero-nanocrystal  Nano-memory  Direct tunneling  Logic array
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