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Investigation on the Luminescent Properties of SiC
作者姓名:WANGQiang  LIYu--guo  SHILi--wei  SHUNHai--bo  XUECheng--shan
作者单位:InstituteofSemiconductor,ShandongNormalUniversity,Jinan250014,CHN
摘    要:Silicon carbide (SiC) is an excellent microelectronic material used to fabricate high frequency, high temperature, high power and non--volatile memory devices. But due to its indirect band gap, SiC based LED can‘t emit light so efficiently as GaN based LED, so people are eager to seek effective means to improve its luminescence efficiency. Amorphous SiC, porous crystalline SiC, nanometer SiC produced by CVD methods and porous SiC formed by ion implantation are investigated, and great progresses have been gained during the latest few years, which make SiC a promising material for developing OEIC.

关 键 词:SiC  碳化硅  OEIC  离子注入  光电集成电路  非晶态
收稿时间:2002/10/10

Investigation on the Luminescent Properties of SiC
WANGQiang LIYu--guo SHILi--wei SHUNHai--bo XUECheng--shan.Investigation on the Luminescent Properties of SiC[J].Semiconductor Photonics and Technology,2003,9(3):182-188.
Authors:WANG Qiang  LI Yu-guo  SHI Li-wei  SHUN Hai-bo  XUE Cheng-shan
Abstract:Silicon carbide (SiC) is an excellent microelectronic material used to fabricate high frequency, high temperature,high power and non-volatile memory devices.But due to its indirect band gap,SiC based LED can't emit light so efficiently as GaN based LED, so people are eager to seek effective means to improve its luminescence efficiency. Amorphous SiC, porous crystalline SiC, nanometer SiC produced by CVD methods and porous SiC formed by ion implantation are investigated, and great progresses have been gained during the latest few years,which make SiC a promising material for developing OEIC.
Keywords:SiC  Amorphous SiC  Porous SiC  Ion implantation  OEIC
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