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Recent Advances in ZnO Films Prepared by Pulsed Laser Deposition
作者姓名:HE  Jian-ting  ZHUANG  Hui-zhao  XUE  Cheng-shan  ZHAO  jing  TIAN  De-heng  WU  Yu-xin  LIU  Yi-an  XUE  Shou-bin  HU  Li-jun
作者单位:Institute of Semiconductor, College of Phys. and Electron. , Shandong Normal University, Ji'nan 250014, CHN
摘    要:Pulsed laser deposition (PLD) is emerging as the most rapid and efficient technique for fabricating the many compound films. ZnO thin films can be prepared under various deposition conditions by PLD. The effects of various substrate temperature, oxygen partial pressure, annealing temperature, substrate, buffer layers thickness and film thickness on micro-structural, optical and electrical properties of ZnO films grown by PLD technology are reviewed. ZnO films with special function can grow under proper conditions by PLD.

关 键 词:ZnO  复合薄膜  脉冲激光沉积  PLD  氧压力  微观结构
文章编号:1007-0206(2005)04-0239-05
收稿时间:2005-06-01
修稿时间:2005-06-23

Recent Advances in ZnO Films Prepared by Pulsed Laser Deposition
HE Jian-ting ZHUANG Hui-zhao XUE Cheng-shan ZHAO jing TIAN De-heng WU Yu-xin LIU Yi-an XUE Shou-bin HU Li-jun.Recent Advances in ZnO Films Prepared by Pulsed Laser Deposition[J].Semiconductor Photonics and Technology,2005,11(4):239-243,258.
Authors:HE Jian-ting  ZHUANG Hui-zhao  XUE Cheng-shan  ZHAO jing  TIAN De-heng  WU Yu-xin  LIU Yi-an  XUE Shou-bin  HU Li-jun
Abstract:Pulsed laser deposition (PLD) is emerging as the most rapid and efficient technique for fabricating the many compound films. ZnO thin films can be prepared under various deposition conditions by PLD. The effects of various substrate temperature, oxygen partial pressure, annealing temperature,substrate, buffer layers thickness and film thickness on micro-structural, optical and electrical properties of ZnO films grown by PLD technology are reviewed. ZnO films with special function can grow under proper conditions by PLD.
Keywords:PLD  ZnO  Substrate temperature  Oxygen pressure
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