首页 | 官方网站   微博 | 高级检索  
     

HfO2-SiO2混合膜力学性能
引用本文:卜笑庆,张锦龙,潘峰,刘华松,樊荣伟.HfO2-SiO2混合膜力学性能[J].红外与激光工程,2018,47(9):921001-0921001(6).
作者姓名:卜笑庆  张锦龙  潘峰  刘华松  樊荣伟
作者单位:1.同济大学 物理科学与工程学院 精密光学工程技术研究所,上海 200092;
基金项目:国家自然科学基金委员会与中国工程物理研究院联合基金(U1430130,U1630124);国家自然科学基金(91536111,61235011)
摘    要:利用离子辅助电子束双源共蒸发工艺方法,制备了SiO2掺杂含量分别为0、13%、20%、30%、40%和100%的六组HfO2-SiO2混合膜。采用纳米压痕法测量了不同组分混合膜的杨氏模量和硬度,并研究了混合膜杨氏模量和硬度随SiO2含量增长的变化规律。结果显示,随着SiO2含量增加,混合膜杨氏模量和硬度均减小,双组分复合材料并联模型可以较好地拟合杨氏模量随混合膜SiO2含量变化关系。为了解释混合膜力学性能随SiO2含量变化规律,对混合膜进行了XRD测试,研究了混合膜微观结构与杨氏模量和硬度的关系,发现结晶对硬度影响显著,对杨氏模量影响较小;用Zygo干涉仪测量了样品的面形,获得了薄膜残余应力随SiO2含量的变化规律,表明SiO2掺杂能减小HfO2薄膜压应力。

关 键 词:混合膜    杨氏模量    硬度    应力    纳米压痕
收稿时间:2018-04-05

Mechanical properties of HfO2-SiO2 mixed films
Abstract:Six groups of HfO2-SiO2 mixed films with SiO2 content about 0, 13%, 20%, 30%, 40% and 100% were prepared using ion-assisted e-beam co-evaporation process separately. The Young's modulus and hardness of the mixed films with different SiO2 content were measured through nanoindentation, and the variation of Young's modulus and hardness as a function of SiO2 content were studied. The results show that with the increase of SiO2 content, both the Young's modulus and hardness of the mixed films decrease, and the variation of Young's modulus of mixed films as a function of SiO2 content can be well fitted by iso-stress model of a two-component composite. In order to illustrate the relation between SiO2 content and mechanical properties of the mixed films, the microstructure of the mixed films was analyzed by XRD, and the influence of microstructure on Young's modulus and hardness were studied. It was found that the crystallization of thin films had major impact on hardness, but little influence on Young's modulus. The residual stresses of the mixed films were calculated using the data of surface shape measured by Zygo interferometer, the variation of stress as a function of SiO2 content was obtained, and a reduction of compressive stress with the SiO2 doped in HfO2 was observed.
Keywords:
点击此处可从《红外与激光工程》浏览原始摘要信息
点击此处可从《红外与激光工程》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司    京ICP备09084417号-23

京公网安备 11010802026262号