| 热处理对离子束溅射SiO2薄膜结构特性的影响分析 |
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| 引用本文： | 季一勤,姜玉刚,刘华松,王利栓,刘丹丹,姜承慧,羊亚平,樊荣伟,陈德应.热处理对离子束溅射SiO2薄膜结构特性的影响分析[J].红外与激光工程,2013,42(2):418-422. |
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| 作者姓名： | 季一勤 姜玉刚 刘华松 王利栓 刘丹丹 姜承慧 羊亚平 樊荣伟 陈德应 |
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| 作者单位： | 1.哈尔滨工业大学 光电子技术研究所 可调谐激光技术国家级重点实验室,黑龙江 哈尔滨 150080; |
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| 基金项目： | 国家自然科学基金(61235011);天津市科委项目(10JCYBJC01500,12JCQNJC01200) |
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| 摘 要： | 采用离子束溅射沉积技术，在熔融石英基底上制备了SiO2薄膜，研究了热处理对离子束溅射SiO2薄膜结构特性的影响。热处理温度对表面粗糙度影响较大，低温热处理可降低表面粗糙度，高温热处理则增大表面粗糙度，选择合适的热处理温度，可以使表面粗糙度几乎不变。采用X射线衍射仪（XRD）物相分析方法，分析了热处理对离子束溅射SiO2薄膜的无定形结构特性的影响，当退火温度为550 ℃，离子束溅射SiO2薄膜的短程有序范围最大、最近邻原子平均距离最小，与熔融石英基底很接近，结构稳定。实验结果表明，采用合适的热处理温度，能大大改善离子束溅射SiO2薄膜的结构特性。
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| 关 键 词： | SiO2薄膜 热处理 表面粗糙度 XRD 无定形结构 |
| 收稿时间： | 2012-06-05 |
Analysis on effects of thermal treatment on structural characteristic of ion beam sputtering SiO2 films |
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| Ji Yiqin,Jiang Yugang,Liu Huasong,Wang Lishuan,Liu Dandan,Jiang Chenghui,Yang Yaping,Fan Rongwei,Chen Deying.Analysis on effects of thermal treatment on structural characteristic of ion beam sputtering SiO2 films[J].Infrared and Laser Engineering,2013,42(2):418-422. |
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| Authors: | Ji Yiqin Jiang Yugang Liu Huasong Wang Lishuan Liu Dandan Jiang Chenghui Yang Yaping Fan Rongwei Chen Deying |
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| Affiliation: | 1.National Key Laboratory of Science and Technology on Tunable Laser,Institute of Optical-electronics,Harbin Institute of Technology,Harbin 150080,China;2.Tianjin Key Laboratory of Optical Thin Film,Tianjin Jinhang Institute of Technical Physics,Tianjin 300192,China;3.Key Laboratory of Advanced Micro-structure Materials,Ministry of Education,Department of Physics,Tongji University,Shanghai 200092,China |
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| Abstract: | SiO2 films were deposited on fused silica substrates by ion beam sputtering(IBS) technology, and the effects of thermal treatment on structural characteristic were researched. The effects of annealing temperature on surface roughness of IBS-SiO2 films were very large, low annealing temperature could reduce the surface roughness, but high annealing temperature could increase the surface roughness, the proper annealing temperature had almost no impact on surface roughness. Amorphous structures of IBS-SiO2 films were researched by XRD technology. When the annealing temperature was 550 ℃, the largest short range order and the shortest average distance were obtained, the results were the same as the fused silica substrate, and the structure was stable. Expermental results show that structural characteristic of IBS-SiO2 films can be improved by the proper thermal treatment. |
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