基于GaN HEMT的X波段连续波内匹配功率管设计

采用内匹配技术,使用两枚GaN HEMT晶体管,在X波段8.0~8.5 GHz频段内,设计并实现了一种高可靠性、高功率附加效率的功率放大器。基于南京电子器件研究所提供的晶体管及负载牵引数据,并结合"L-C-L"匹配网络以及威尔金森功率分配/合成器,对晶体管的输入和输出阻抗进行了相应匹配,使得其端口阻抗均为50Ω。最终通过两胞合成的方式实现了在目标频段内,栅电压-2.2 V、漏电压24 V,连续波工作状态下,所设计功率放大器输出功率高于20 W、功率增益大于10 dB、功率的附加效率大于49.7%。其中,在8.1~8.4 GHz,该功率放大器功率附加效率超过52%,优于我国现有相近频段内匹配功率放大器的功率附加效率,并通过实验验证了该设计方案的可靠性。

Design of X-Band Continuous Wave Internal Matched Power Transistor Based on GaN HEMT

A power amplifier with high reliability and high PAE(power added efficiency)is designed and realized within X-band,i.e.,from 8.0 GHz to 8.5 GHz,by means of the internal matching technology and two GaN HEMT transistors.Based on the transistor and load-pull data provided by the Nanjing Electronic Devices Institute,the input and output impedances of the transistor are all matched to 50Ωby utilizing the"L-C-L"matching network and Wilkinson power divider/combiner.By using two transistors,under the working state of-2.2 V grid voltage,24 V drain voltage and continuous wave,the output power is greater than 20 W and the power gain is greater than 10 dB within the target frequency band.Besides,for the proposed power amplifier the overall PAE is better than 49.7%,where over 52%PAE has been achieved from 8.1 GHz to 8.4 GHz.This performance is better than the current PAE of the matching power amplifier at the similar frequency band in China.Finally,the reliability of the power amplifier has been successfully verified by experiments.