P-N double quantum well resonant interband tunneling diode withpeak-to-valley current ratio of 144 at room temperature |
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| Authors: | Tsai HH Su YK Lin HH Wang RL Lee TL |
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| Affiliation: | Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan; |
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| Abstract: | The current-voltage characteristics of the P-N double quantum well resonant interband tunneling (RIT) diodes in InAlAs-InGaAs system have been improved in this letter. The peak-to-valley current ratio (PVCR) is as high as 144 at room temperature. As we know, this is the highest room temperature PVCR ever reported in any tunneling devices. Moreover, the influence of the central barrier thickness varying from 10 Å to 30 Å on the device characteristics is also studied |
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