A BSIM3-based flat-band voltage perturbation model for RTS and 1/fnoise

Recently, a new random telegraph signal (RTS) noise model for the drain current fluctuations (ΔI_d) associated with single-carrier trapping and detrapping has been developed from a flat-hand voltage perturbation (ΔV_fb) of the BSIM3 current-voltage (I-V) model (Martin et al., 1997). The model's accuracy in predicting the gate bias and geometry dependence of RTS magnitudes has been verified and summarized. In this letter, the perturbation model has been extended to yield a new formulation for the scattering coefficient (α) which predicts the magnitude and bias dependence of 1/f noise without fitting parameters. The absence of fitting parameters allows for a direct determination of the oxide trap density (N_t(E_fn)) from 1/f noise measurements. Results suggest that the BSIM3-based model accurately predicts the bias and geometry dependence of 1/f noise, that N₂O annealing may significantly increase the oxide trap density at strong inversion and that the bias dependence of N_t(E_fn) contains most of the 1/f noise dependence upon V_g